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Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi2Te2.4Se0.6

AuthorsKlimovskikh, Ilya I.; Sostina, Daria; Petukhov, Anatoly E.; Rybkin, Artem G.; Eremeev, S. V.; Chulkov, Eugene V. CSIC ORCID; Tereshchenko, Oleg E.; Kokh, Konstantin A.; Shikin, Alexander M.
Issue Date2017
PublisherNature Publishing Group
CitationScientific Reports 7: 45797 (2017)
AbstractTwo-and three-dimensional topological insulators are the key materials for the future nanoelectronic and spintronic devices and quantum computers. By means of angle-and spin-resolved photoemission spectroscopy we study the electronic and spin structure of the Bi-bilayer/3D topological insulator in quantum tunneling regime formed under the short annealing of BiTeSe Owing to the temperature-induced restructuring of the topological insulator's surface quintuple layers, the hole-like spin-split Bi-bilayer bands and the parabolic electronic-like state are observed instead of the Dirac cone. Scanning Tunneling Microscopy and X-ray Photoemission Spectroscopy measurements reveal the appearance of the Bi terraces at the surface under the annealing. The experimental results are supported by density functional theory calculations, predicting the spin-polarized Bi-bilayer bands interacting with the quintuple-layers-derived states. Such an easily formed heterostructure promises exciting applications in spin transport devices and low-energy electronics.
Publisher version (URL)https://doi.org/10.1038/srep45797
Identifiersdoi: 10.1038/srep45797
e-issn: 2045-2322
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