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Título: | Spin-orbit coupling induced gap in graphene on Pt(111) with intercalated Pb monolayer |
Autor: | Klimovskikh, Ilya I.; Otrokov, M. M. CSIC ORCID; Voroshnin, Vladimir Yu.; Sostina, Daria; Petaccia, Luca; Di Santo, Giovanni; Thakur, Sangeeta; Chulkov, Eugene V. CSIC ORCID; Shikin, Alexander M. | Palabras clave: | ARPES Electronic structure Graphene Spin−orbit coupling Topological insulators |
Fecha de publicación: | 2017 | Editor: | American Chemical Society | Citación: | ACS Nano 11(1): 368-374 (2017) | Resumen: | Graphene is one of the most promising materials for nanoelectronics owing to its unique Dirac cone-like dispersion of the electronic state and high mobility of the charge carriers. However, to facilitate the implementation of the graphene-based devices, an essential change of its electronic structure, a creation of the band gap should controllably be done. Brought about by two fundamentally different mechanisms, a sublattice symmetry breaking or an induced strong spin-orbit interaction, the band gap appearance can drive graphene into a narrow-gap semiconductor or a 2D topological insulator phase, respectively, with both cases being technologically relevant. The later case, characterized by a spin-orbit gap between the valence and conduction bands, can give rise to the spin-polarized topologically protected edge states. Here, we study the effect of the spin-orbit interaction enhancement in graphene placed in contact with a lead monolayer. By means of angle-resolved photoemission spectroscopy, we show that intercalation of the Pb interlayer between the graphene sheet and the Pt(111) surface leads to formation of a gap of 200 meV at the Dirac point of graphene. Spin-resolved measurements confirm the splitting to be of a spin-orbit nature, and the measured near-gap spin structure resembles that of the quantum spin Hall state in graphene, proposed by Kane and Mele [ Phys. Rev. Lett. 2005, 95, 226801 ]. With a bandstructure tuned in this way, graphene acquires a functionality going beyond its intrinsic properties and becomes more attractive for possible spintronic applications. | Versión del editor: | https://doi.org/10.1021/acsnano.6b05982 | URI: | http://hdl.handle.net/10261/177221 | DOI: | 10.1021/acsnano.6b05982 | Identificadores: | doi: 10.1021/acsnano.6b05982 e-issn: 1936-086X issn: 1936-0851 |
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