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dc.contributor.authorKlimovskikh, Ilya I.-
dc.contributor.authorOtrokov, M. M.-
dc.contributor.authorVoroshnin, Vladimir Yu.-
dc.contributor.authorSostina, Daria-
dc.contributor.authorPetaccia, Luca-
dc.contributor.authorDi Santo, Giovanni-
dc.contributor.authorThakur, Sangeeta-
dc.contributor.authorChulkov, Eugene V.-
dc.contributor.authorShikin, Alexander M.-
dc.date.accessioned2019-03-05T08:16:19Z-
dc.date.available2019-03-05T08:16:19Z-
dc.date.issued2017-
dc.identifierdoi: 10.1021/acsnano.6b05982-
dc.identifiere-issn: 1936-086X-
dc.identifierissn: 1936-0851-
dc.identifier.citationACS Nano 11(1): 368-374 (2017)-
dc.identifier.urihttp://hdl.handle.net/10261/177221-
dc.description.abstractGraphene is one of the most promising materials for nanoelectronics owing to its unique Dirac cone-like dispersion of the electronic state and high mobility of the charge carriers. However, to facilitate the implementation of the graphene-based devices, an essential change of its electronic structure, a creation of the band gap should controllably be done. Brought about by two fundamentally different mechanisms, a sublattice symmetry breaking or an induced strong spin-orbit interaction, the band gap appearance can drive graphene into a narrow-gap semiconductor or a 2D topological insulator phase, respectively, with both cases being technologically relevant. The later case, characterized by a spin-orbit gap between the valence and conduction bands, can give rise to the spin-polarized topologically protected edge states. Here, we study the effect of the spin-orbit interaction enhancement in graphene placed in contact with a lead monolayer. By means of angle-resolved photoemission spectroscopy, we show that intercalation of the Pb interlayer between the graphene sheet and the Pt(111) surface leads to formation of a gap of 200 meV at the Dirac point of graphene. Spin-resolved measurements confirm the splitting to be of a spin-orbit nature, and the measured near-gap spin structure resembles that of the quantum spin Hall state in graphene, proposed by Kane and Mele [ Phys. Rev. Lett. 2005, 95, 226801 ]. With a bandstructure tuned in this way, graphene acquires a functionality going beyond its intrinsic properties and becomes more attractive for possible spintronic applications.-
dc.description.sponsorshipThe work was partially supported by grants from Saint Petersburg State University for scientific investigations (Nos. 11.38.271.2014 and 15.61.202.2015) and DFG - SPbU grant No. 11.65.42.2017. We acknowledge financial support from the University of Basque Country UPV/EHU (Grant No. GIC07-IT-756-13), the Departamento de Educacion del Gobierno Vasco and the Spanish Ministerio de Ciencia e Innovacion (Grant No. FIS2010-19609-C02-01), the Spanish Ministry of Economy and Competitiveness MINECO (Grant No. FIS2013-48286-C2-1-P), and the Tomsk State University Academic D. I. Mendeleev Fund Program in 2015 (Research Grant No. 8.1.05.2015).-
dc.publisherAmerican Chemical Society-
dc.relationMINECO/ICTI2013-2016/FIS2013-48286-C2-1-P-
dc.relation.isversionofPostprint-
dc.rightsopenAccess-
dc.subjectARPES-
dc.subjectElectronic structure-
dc.subjectGraphene-
dc.subjectSpin−orbit coupling-
dc.subjectTopological insulator-
dc.titleSpin-orbit coupling induced gap in graphene on Pt(111) with intercalated Pb monolayer-
dc.typeartículo-
dc.identifier.doihttp://dx.doi.org/10.1021/acsnano.6b05982-
dc.relation.publisherversionhttps://doi.org/10.1021/acsnano.6b05982-
dc.date.updated2019-03-05T08:16:19Z-
dc.description.versionPeer Reviewed-
dc.language.rfc3066eng-
dc.contributor.funderEusko Jaurlaritza-
dc.contributor.funderSaint Petersburg State University-
dc.contributor.funderUniversidad del País Vasco-
dc.contributor.funderGerman Research Foundation-
dc.contributor.funderMinisterio de Ciencia e Innovación (España)-
dc.contributor.funderTomsk State University-
dc.contributor.funderMinisterio de Economía y Competitividad (España)-
dc.relation.csic-
dc.identifier.funderhttp://dx.doi.org/10.13039/501100003329es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100001659es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100004837es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100003086es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100004285es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100008566es_ES
dc.identifier.pmid28005333-
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