English   español  
Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/17688
Compartir / Impacto:
Estadísticas
Add this article to your Mendeley library MendeleyBASE
 |  Ver citas en Google académico
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Título

Electrical properties in WO3 doped Bi4Ti3O12 materials

AutorJardiel, Teresa; Caballero Cuesta, Amador; Villegas, Marina
Palabras claveBi4Ti3O12 ceramics
Platelets
Fecha de publicación2007
EditorElsevier
CitaciónJournal of the European Ceramic Society 27 (2007) 4115–4119
ResumenElectrical conductivity decrease observed in BIT-based materials doped withW6+ is consistent with a lowering of both oxygen vacancies and hole concentration. The dielectric anomaly observed in BIT at temperatures below Tc decreases and finally disappears with the donor doping. Following the same trend, dielectric losses fall when the amount of dopant increases and remain in low values up to high temperatures. Compared to undoped BIT, substitution of Ti4+ by W6+ leads to a decrease of 2–3 orders of magnitude in the electrical conductivity. The average activation energy for the electrical conductivity depends on the microstructure, specifically on the aspect ratio (length/thickness) of the plate-like grains. This is because the conduction mechanism in the ab planes is different to that of the c-axis, mixing ionic and p-type conductivity, respectively.
Versión del editorhttp://dx.doi.org/10.1016/j.jeurceramsoc.2007.02.102
URIhttp://hdl.handle.net/10261/17688
DOI10.1016/j.jeurceramsoc.2007.02.102
Aparece en las colecciones: (ICV) Artículos
Ficheros en este ítem:
No hay ficheros asociados a este ítem.
Mostrar el registro completo
 


NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.