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| Título: | Investigation of the multilevel capability of TiN/Ti/HfO2/W resistive switching devices by sweep and pulse programming |
Autor: | Poblador, Samuel CSIC ORCID ; González, M. B.; Campabadal, Francesca CSIC ORCID | Fecha de publicación: | 2018 | Editor: | Elsevier | Citación: | Microelectronic Engineering 187-188: 148- 153 (2018) | Resumen: | Multilevel states are clearly distinguished in TiN/Ti/HfO/W RRAM devices by programming sequential voltage ramps and trains of pulses. It has been shown that the filamentary conductance has a continuous dependence on the current compliance employed during the SET process and the maximum voltage applied during the RESET process. The LRS conductance is determined by the current compliance, while the HRS is given by the RESET pulse amplitude. The obtained results suggest that the studied devices can be employed as electronic synaptic devices in neuromorphic circuits. | URI: | http://hdl.handle.net/10261/176024 | DOI: | 10.1016/j.mee.2017.11.007 | Identificadores: | doi: 10.1016/j.mee.2017.11.007 issn: 0167-9317 |
| Aparece en las colecciones: | (IMB-CNM) Artículos |
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