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Título

Scanning x-ray excited optical luminescence microscopy in GaN

AutorMartínez-Criado, Gema; Alén, Benito ; Homs, Alejandro; Somogyi, A.; Miskys, C.; Susini, Jean; Pereira-Lachataignerais, J.; Martínez-Pastor, Juan
Palabras claveGallium compounds
Manganese
Wide band gap semiconductors
III-V semiconductors
X-ray absorption spectra
Photoluminescence
Fluorescence
Defect states
Semiconductor epitaxial layers
Fecha de publicación29-nov-2006
EditorAmerican Institute of Physics
CitaciónAPPLIED PHYSICS LETTERS 89, 221913 (2006)
ResumenIn this work, an imaging tool to investigate optical inhomogeneities with site and chemical sensitivities has been integrated in a hard x-ray microprobe. Freestanding GaN and epitaxially grown GaN:Mn on -Al2O3 are used to exploit the unprecedented scanning x-ray excited luminescence technique. Optical images of the radiative recombination channels are reported for several impurities and defect centers in sapphire and GaN compounds. Within the experimental accuracy, a visible nonuniformity characterizes the Mn centers in good correlation with former x-ray fluorescence map. Expanding the microprobe versatility, x-ray absorption spectroscopy in both photon collection modes (x-ray excited luminescence and x-ray fluorescence) is finally presented from a freestanding GaN layer.
Versión del editorhttp://link.aip.org
http://dx.doi.org/10.1063/1.2399363
URIhttp://hdl.handle.net/10261/17546
DOI10.1063/1.2399363
ISSN0003-6951
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