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Size-Controlled Si Nanocrystals Fabricated by Electron Beam Evaporation

AuthorsBlázquez, O.; López-Conesa, L.; López-Vidrier, J.; Frieiro, J. L.; Estradé, S.; Peiró, F.; Ibáñez Insa, Jordi ; Hernández, S.; Garrido, B.
Keywordselectron beam evaporation
multilayered silicon nanocrystals
Raman scattering
transmission electron microscopy
Issue DateJan-2019
PublisherJohn Wiley & Sons
CitationPhysica Status Solidi (A) Applications and Materials Science: Article number 1800619 (2019)
AbstractMultilayers consisting of silicon nanocrystals (Si NCs) and SiO2 are successfully fabricated by electron beam evaporation, using pure Si and SiO2 targets in an oxygen-rich atmosphere for alternately depositing silicon-rich oxide (SRO) layers and SiO2 barriers, respectively. A post-deposition annealing process is carried out at different temperatures in order to achieve the Si precipitation in the form of nanocrystals. The stoichiometry of the layers is determined by X-ray photoelectron spectroscopy, which confirms the controlled silicon oxidation in order to attain SRO layers. Transmission electron microscopy and Raman-scattering measurements confirm the presence of crystalline Si-nanoprecipitates. Photoluminescence spectra from the Si NC samples can be deconvolved into two contributions, whose dynamics suggest that two different luminescent centers are responsible for the optical emission of the samples. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Publisher version (URL)https://doi.org/10.1002/pssa.201800619
Appears in Collections:(ICTJA) Artículos
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