English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/173961
Share/Impact:
Statistics
logo share SHARE   Add this article to your Mendeley library MendeleyBASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:
Title

Defect landscape and electrical properties in solution-derived LaNiO3 and NdNiO3 epitaxial thin films

AuthorsMundet, Bernat ; Jareño Cerulla, Julia ; Gázquez, Jaume ; Varela, María; Obradors, Xavier ; Puig Molina, Teresa
KeywordsMetal-insulator transition
Strain
Oxides
Thin films
Scanning transmission electron microscopy
Issue Date27-Jun-2018
PublisherAmerican Physical Society
CitationPhysical Review Materials 2(6): 063607 (2018)
AbstractIn this work we evaluate the defects and the associated distortions present in tensile and compressive-strained chemical solution deposition (CSD) derived NdNiO3 (NNO) and LaNiO3 (LNO) thin-films by means of aberration corrected Scanning Transmission Electron Microscopy (STEM). We elucidate a fundamental link between strain and the most common defect observed in Nickelate films, the Ruddlesden-Popper fault (RPF), which will ultimately impinge on the electrical properties of the films. Overall, the concentration of RPFs defects increases with the lattice mismatch. More specifically, LNO films are always metallic, although transitioning from compressive to tensile strain results in the appearance of RPFs and an increase of the resistivity. On the other hand, NNO films always behave as insulators under tensile strain, whereas under compressive strain the increase of the thickness makes the onset of the metal-to-insulator transition (MIT) to shift to higher temperatures.
Publisher version (URL)http://dx.doi.org/10.1103/PhysRevMaterials.2.063607
URIhttp://hdl.handle.net/10261/173961
ISSN2475-9953
Appears in Collections:(ICMAB) Artículos
Files in This Item:
File Description SizeFormat 
Mundet_PhysRevMat_2018_postprint.pdf1,08 MBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.