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Título

Self-assembling processes involved in the molecular beam epitaxy growth of stacked InAs/InP quantum wires

AutorUlloa, J. M.; Koenraad, P. M.; Fuster, David ; González Sotos, Luisa ; González Díez, Yolanda ; González Sagardoy, María Ujué
Palabras claveQuantum wires
III-V semiconductor nanostructures
X-STM
MBE
Fecha de publicación29-sep-2008
EditorInstitute of Physics Publishing
CitaciónNanotechnology, 19 (2008
ResumenThe growth mechanism of stacked InAs/InP(001) quantum wires (QWRs) is studied by combining an atomic-scale cross-sectional scanning tunnelling microscopy analysis with in situ and in real-time stress measurements along the [110] direction (sensitive to stress relaxation during QWR formation). QWRs in stacked layers grow by a non-Stranski–Krastanov (SK) process which involves the production of extra InAs by strain-enhanced As/P exchange and a strong strain driven mass transport. Despite the different growth mechanism of the QWR between the first and following layers of the stack, the QWRs maintain on average the same shape and composition in all the layers of the stack, revealing the high stability of this QWR configuration.
Versión del editorhttp://dx.doi.org/10.1088/0957-4484/19/44/445601
URIhttp://hdl.handle.net/10261/17359
DOI10.1088/0957-4484/19/44/445601
ISSN0957-4484
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