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Título: | Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings |
Autor: | Ouerghui, W.; Martínez Pastor, Juan Pascual CSIC ORCID; Gomis, J.; Melliti, A.; Maaref, M. A.; Granados, Daniel CSIC ORCID; García Martínez, Jorge Manuel CSIC ORCID CVN | Palabras clave: | Cr-III-V semiconductors Multilayers Superlattices |
Fecha de publicación: | 9-jun-2006 | Editor: | EDP Sciences | Citación: | European Physical Journal Applied Physics 35 (2006) | Resumen: | We present results concerning the carrier transfer between In(Ga)As quantum rings in a stacked multilayer structure, which is characterised by a bimodal size distribution. This transfer of carriers explains the observed temperature behaviour of diode lasers based on that kind of stacked layer structures. The inter-ring carrier transfer can be possible by phonon assisted tunnelling from the ground state of the smallring family towards the big-ring family of the bimodal size distribution. This process is thermally activated in the range 40–80 K. | Versión del editor: | http://www.edpsciences.org/epjap http://dx.doi.org/10.1051/epjap:2006088 |
URI: | http://hdl.handle.net/10261/17140 | DOI: | 10.1051/epjap:2006088 | ISSN: | 1286-0042 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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Fichero | Descripción | Tamaño | Formato | |
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Ouerghui, W. et al Eur.Phy.J.Appl. Phy._35_2006.pdf | 237,04 kB | Adobe PDF | Visualizar/Abrir |
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