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Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings

AuthorsOuerghui, W.; Martínez Pastor, Juan Pascual ; Gomis, J.; Melliti, A.; Maaref, M. A.; Granados, Daniel ; García Martínez, Jorge Manuel
KeywordsCr-III-V semiconductors
Issue Date9-Jun-2006
PublisherEDP Sciences
CitationEuropean Physical Journal Applied Physics 35 (2006)
AbstractWe present results concerning the carrier transfer between In(Ga)As quantum rings in a stacked multilayer structure, which is characterised by a bimodal size distribution. This transfer of carriers explains the observed temperature behaviour of diode lasers based on that kind of stacked layer structures. The inter-ring carrier transfer can be possible by phonon assisted tunnelling from the ground state of the smallring family towards the big-ring family of the bimodal size distribution. This process is thermally activated in the range 40–80 K.
Publisher version (URL)http://www.edpsciences.org/epjap
Appears in Collections:(IMN-CNM) Artículos
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