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Polarization‐Sensitive and Broadband Photodetection Based on a Mixed‐Dimensionality TiS3/Si p–n Junction

AuthorsNiu, Yue; Frisenda, Riccardo; Flores, Fernando; Ares, José R.; Jiao, Weicheng; Pérez de Lara, David; Sánchez López, Carlos; Wang, Rongguo; Ferrer, Isabel J.; Castellanos-Gómez, Andrés
KeywordsOptoelectronic devices
p–n junctions
Titanium trisulfide
Issue Date4-Oct-2018
PublisherJohn Wiley & Sons
CitationAdvanced Optical Materials 6(1): 1800351 (2018)
AbstractThe capability to detect the polarization state of light is crucial in many day‐life applications and scientific disciplines. Novel anisotropic 2D materials such as TiS3 combine polarization sensitivity, given by the in‐plane optical anisotropy, with excellent electrical properties. Here, the fabrication of a monolithic polarization‐sensitive broadband photodetector based on a mixed‐dimensionality TiS3/Si p–n junction is demonstrated. The fabricated devices show broadband responsivity up to 1050 nm, a strong sensitivity to linearly polarized illumination with difference between the two orthogonal polarization states up to 350%, and a good detectivity and fast response time. The discussed devices can be used as building blocks to fabricate more complex polarization‐sensitive systems such as polarimeters.
Publisher version (URL)https://doi.org/10.1002/adom.201800351
Appears in Collections:(ICMM) Artículos
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