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dc.contributor.authorFernández, M.-
dc.contributor.authorGonzález Sánchez, J.-
dc.contributor.authorJaramillo, R.-
dc.contributor.authorMoll, M.-
dc.contributor.authorMontero Santos, Raúl-
dc.contributor.authorMoya, David-
dc.contributor.authorPalomo, Francisco Rogelio-
dc.contributor.authorVila, Iván-
dc.date.accessioned2018-10-08T09:12:07Z-
dc.date.available2018-10-08T09:12:07Z-
dc.date.issued2017-
dc.identifierdoi: 10.1016/j.nima.2016.05.070-
dc.identifierissn: 0168-9002-
dc.identifier.citationNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 845: 69-71 (2017)-
dc.identifier.urihttp://hdl.handle.net/10261/170724-
dc.description.abstractFor the first time, the deep n-well (DNW) depletion space of a High Voltage CMOS sensor has been characterized using a Transient Current Technique based on the simultaneous absorption of two photons. This novel approach has allowed to resolve the DNW implant boundaries and therefore to accurately determine the real depleted volume and the effective doping concentration of the substrate. The unprecedented spatial resolution of this new method comes from the fact that measurable free carrier generation in two photon mode only occurs in a micrometric scale voxel around the focus of the beam. Real three-dimensional spatial resolution is achieved by scanning the beam focus within the sample.-
dc.description.sponsorshipThis work was performed in the framework of the CERN-RD50 collaboration under the project RD50-2015-03. The project has received funding from the European Commission under the FP7 Research Infrastructures project AIDA, grant agreement no. 262025. This project has been partially supported by the Spanish Ministry of Economy and Competitiveness (MINECO) under grant number FPA2013-48387-C6-1-P.-
dc.publisherElsevier-
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/262025-
dc.relationMINECO/ICTI2013-2016/FPA2013-48387-C6-1-P-
dc.rightsclosedAccess-
dc.subjectTransient current technique-
dc.subjectHigh-voltage CMOS technology-
dc.subjectParticle tracking pixel detectors-
dc.subjectTwo photon absorption-
dc.titleHigh-resolution three-dimensional imaging of a depleted CMOS sensor using an edge Transient Current Technique based on the Two Photon Absorption process (TPA-eTCT)-
dc.typeartículo-
dc.identifier.doi10.1016/j.nima.2016.05.070-
dc.date.updated2018-10-08T09:12:08Z-
dc.description.versionPeer Reviewed-
dc.language.rfc3066eng-
dc.contributor.funderEuropean Organization for Nuclear Research-
dc.contributor.funderEuropean Commission-
dc.contributor.funderMinisterio de Economía y Competitividad (España)-
dc.relation.csic-
dc.identifier.funderhttp://dx.doi.org/10.13039/501100003329es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100000780es_ES
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