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Title

High-resolution three-dimensional imaging of a depleted CMOS sensor using an edge Transient Current Technique based on the Two Photon Absorption process (TPA-eTCT)

AuthorsFernández, M. ; González Sánchez, J. ; Jaramillo, R. ; Moll, M.; Montero Santos, Raúl; Moya, David ; Palomo, Francisco Rogelio; Vila, Iván
KeywordsTransient current technique
High-voltage CMOS technology
Particle tracking pixel detectors
Two photon absorption
Issue Date2017
PublisherElsevier
CitationNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 845: 69-71 (2017)
AbstractFor the first time, the deep n-well (DNW) depletion space of a High Voltage CMOS sensor has been characterized using a Transient Current Technique based on the simultaneous absorption of two photons. This novel approach has allowed to resolve the DNW implant boundaries and therefore to accurately determine the real depleted volume and the effective doping concentration of the substrate. The unprecedented spatial resolution of this new method comes from the fact that measurable free carrier generation in two photon mode only occurs in a micrometric scale voxel around the focus of the beam. Real three-dimensional spatial resolution is achieved by scanning the beam focus within the sample.
URIhttp://hdl.handle.net/10261/170724
Identifiersdoi: 10.1016/j.nima.2016.05.070
issn: 0168-9002
Appears in Collections:(IFCA) Artículos
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