English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/169773
Share/Impact:
Statistics
logo share SHARE   Add this article to your Mendeley library MendeleyBASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Title

Ultra High Vacuum PVD Graphene growth on Cu-foils from a C60 carbon source: growth and characterization

AuthorsAzpeitia-Urkia, Jon ; Otero, Gonzalo ; Mompean, F. J. ; Sánchez, B.; García-Hernández, M. ; Martín-Gago, José A. ; Munuera, C. ; López, María Francisca
Issue DateAug-2014
CitationFuerzas y Túnel (2014)
AbstractThe production of high-quality inexpensive graphene is an absolutely necessary first step for the material to ever live up to its promise in commercial applications. Among the different growth methods reported to date, physical vapor deposition (PVD) from a suitable organic precursor emerges as an advantageous procedure since lower substrate temperatures are required to produce graphene. On the other hand, particularly attractive is the use of low carbon solubility Cu substrates for graphene growth, owing to its inexpensiveness and the possibility of post-growth graphene transfer on arbitrary substrates.
DescriptionTrabajo presentado en la conferencia Fuerzas y Túnel (FyT2014), celebrada en San Sebastián del 27 al 29 de agosto de 2014.
URIhttp://hdl.handle.net/10261/169773
Appears in Collections:(ICMM) Comunicaciones congresos
Files in This Item:
File Description SizeFormat 
ultra_high_vacuum_PVD_graphene.pdf262,86 kBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.