English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/169748
logo share SHARE   Add this article to your Mendeley library MendeleyBASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Selectable texture in epitaxial ferroelectric BaTiO3 films integrated with silicon

AuthorsLyu, Jike; Fina, Ignasi ; Solanas, Raul ; Fontcuberta, Josep ; Sánchez Barrera, Florencio
Issue Date12-Sep-2018
PublisherRoyal Society of Chemistry (UK)
CitationCrystEngComm: 10.1039/C8CE01093E (2018)
AbstractFerroelectric BaTiO3 films have been epitaxially grown by pulsed laser deposition on buffered Si substrates. We show that BaTiO3 films texture is selectable by appropriate choice of Si wafer orientation and buffer layers. BaTiO3 films having (00l), (l0l) or (l0l)/(l00) texture present very flat surface, low current leakage, and sizeable ferroelectric polarization. The films, integrated on silicon platforms, offer opportunities to exploit anisotropic optic and dielectric properties of ferroelectric BaTiO3.
Publisher version (URL)http://dx.doi.org/10.1039/C8CE01093E
Appears in Collections:(ICMAB) Artículos
Files in This Item:
File Description SizeFormat 
Lyu_CrystEngComm_2018_postprint.pdf Embargoed until September 12, 2019831,43 kBAdobe PDFThumbnail
View/Open    Request a copy
Show full item record
Review this work

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.