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Title

A photoelectron diffraction method to evaluate in-plane atomic distances at surfaces: the two atoms approximation

AuthorsRojas, C.; Martín-Gago, José A. ; Román García, Elisa Leonor ; López, María Francisca ; Goldoni, A.; Paolucci, G.
KeywordsCopper
Low index single crystal surfaces
Metal–semiconductor interfaces
Oxygen
Photoelectron diffraction
Silicon
Surface structure
Morphology
Issue Date15-Jun-1999
PublisherElsevier
CitationSurface Science 429(1-3): 298-308 (1999)
AbstractWe propose a procedure based on the photoelectron diffraction technique to evaluate in-plane atomic distances for adsorbate systems and overlayers. A comparison between the experimentally determined angular position of the first order interference maxima in photoelectron diffraction azimuthal scans at the grazing angle and the same quantity calculated by a simplified single scattering cluster calculation provides approximate in-plane distances between atoms which can be used as a starting point for more complex calculations. In this paper we test this approach to evaluate the geometrical atomic structure of two prototypical cases, the O-(2×1)/Cu(110) and the Si-c(2×2)/Cu(110) systems. The applicability and limitations of the method are thoroughly discussed in the text.
Publisher version (URL)https://doi.org/10.1016/S0039-6028(99)00392-1
URIhttp://hdl.handle.net/10261/169249
DOI10.1016/S0039-6028(99)00392-1
ISSN0039-6028
Appears in Collections:(ICMM) Artículos
(CENIM) Artículos
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