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Formation and stability of the Cu(110)+c(2×2)-Si surface alloy studied by high resolution XPS

AuthorsRojas, C.; Palomares, F. Javier ; López, María Francisca ; Goldoni, A.; Paolucci, G.; Martín-Gago, José A.
Metal–semiconductor interfaces
Surface structure, morphology, roughness, and topography
Synchrotron radiation photoelectron spectroscopy
Issue Date20-May-2000
CitationSurface Science 454: 778-782 (2000)
AbstractHigh-resolution synchrotron radiation photoemission has been used to investigate the formation of the Cu(110)+c(2×2)-Si surface alloy. The complex spectra of the Si 2p core-level are analyzed as multiple component spectra for different Si coverages and annealing temperatures of the surface alloy. The results show that c(2×2) islands are formed from the very beginning of the growth and that Si has a high diffusion length on Cu. The thermal stability of the surface alloy has been studied by measuring real-time photoemission spectra at different temperatures. The surface alloy is stable up to 180°C. Above this temperature disruption of the surface alloy and clustering of the Si atoms can be observed.
Publisher version (URL)https://doi.org/10.1016/S0039-6028(00)00183-7
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