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Growth of subnanometer-thin Si overlayer on TiO2 (1 1 0)-(1×2) surface

AuthorsAbad, José; Rogero, Celia ; Méndez, Javier ; López, María Francisca ; Martín-Gago, José A. ; Román García, Elisa Leonor
KeywordsTitanium oxide
Silicon oxide
X-ray photoelectron spectroscopy (XPS)
Ultraviolet photoelectron spectroscopy (UPS)
Low energy electron diffraction (LEED)
Scanning tunneling microscopy (STM)
Surface oxidation
Issue Date15-Jul-2004
CitationApplied Surface Science 234(1-4): 497-502 (2004)
AbstractThe growth of subnanometer silicon overlayers on TiO2 (1 1 0)-(1×2) reconstructed surfaces at room temperature (RT) has been studied by X-ray and ultra-violet photoelectron spectroscopies (XPS and UPS), low energy electron diffraction (LEED) and scanning tunneling microscopy (STM). For Si coverage of 1 monolayer (ML) only Si2+ species were detected on top of a further reduced TiO2 surface. Upon Si coverage, the characteristic (1×2) LEED pattern from the substrate is completely attenuated, indicating absence of long-range order. Therefore, the combination of all the above mentioned techniques, indicates that the Si overlayer consists of a smooth and homogeneous Si oxide layer on a reduced TiO2 surface.
Publisher version (URL)https://doi.org/10.1016/j.apsusc.2004.05.082
Appears in Collections:(ICMM) Artículos
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