English   español  
Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/168525
COMPARTIR / IMPACTO:
Estadísticas
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:
Título

Ultra-thin Si overlayers on the TiO2 (1 1 0)-(1 × 2) surface: Growth mode and electronic properties

AutorAbad, José; Rogero, Celia ; Méndez, Javier ; López, María Francisca ; Martín-Gago, José A. ; Román García, Elisa Leonor
Palabras claveTitanium dioxide
Silicon
Silicon oxide
X-ray photoelectron spectroscopy (XPS)
Ultraviolet photoelectron spectroscopy (UPS)
Electron energy loss spectroscopy (ELS)
Low energy electron diffraction (LEED-IV)
Scanning tunneling microscopy (STM)
Fecha de publicación1-jul-2006
EditorElsevier
CitaciónSurface Science 600(13): 2696-2704 (2006)
ResumenThe growth of thin subnanometric silicon films on TiO2 (1 1 0)-(1 × 2) reconstructed surfaces at room temperature (RT) has been studied in situ by X-ray and ultra-violet photoelectron spectroscopies (XPS and UPS), Auger electron and electron-energy-loss spectroscopies (AES and ELS), quantitative low energy electron diffraction (LEED-IV), and scanning tunneling microscopy (STM). For Si coverage up to one monolayer, a heterogeneous layer is formed. Its composition consists of a mixture of different suboxides SiOx (1 < x ⩽ 2) on top of a further reduced TiO2 surface. Upon Si coverage, the characteristic (1 × 2) LEED pattern from the substrate is completely attenuated, indicating absence of long-range order. Annealing the SiOx overlayer results in the formation of suboxides with different stoichiometry. The LEED pattern recovers the characteristic TiO2 (1 1 0)-(1 × 2) diagram. LEED I–V curves from both, substrate and overlayer, indicate the formation of nanometric sized SiOx clusters.
Versión del editorhttps://doi.org/10.1016/j.susc.2006.04.023
URIhttp://hdl.handle.net/10261/168525
DOI10.1016/j.susc.2006.04.023
ISSN0039-6028
Aparece en las colecciones: (ICMM) Artículos
Ficheros en este ítem:
Fichero Descripción Tamaño Formato  
accesoRestringido.pdf15,38 kBAdobe PDFVista previa
Visualizar/Abrir
Mostrar el registro completo
 

Artículos relacionados:


NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.