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Ultra-thin Si overlayers on the TiO2 (1 1 0)-(1 × 2) surface: Growth mode and electronic properties

AuthorsAbad, José; Rogero, Celia ; Méndez, Javier ; López, María Francisca ; Martín-Gago, José A. ; Román García, Elisa Leonor
KeywordsTitanium dioxide
Silicon oxide
X-ray photoelectron spectroscopy (XPS)
Ultraviolet photoelectron spectroscopy (UPS)
Electron energy loss spectroscopy (ELS)
Low energy electron diffraction (LEED-IV)
Scanning tunneling microscopy (STM)
Issue Date1-Jul-2006
CitationSurface Science 600(13): 2696-2704 (2006)
AbstractThe growth of thin subnanometric silicon films on TiO2 (1 1 0)-(1 × 2) reconstructed surfaces at room temperature (RT) has been studied in situ by X-ray and ultra-violet photoelectron spectroscopies (XPS and UPS), Auger electron and electron-energy-loss spectroscopies (AES and ELS), quantitative low energy electron diffraction (LEED-IV), and scanning tunneling microscopy (STM). For Si coverage up to one monolayer, a heterogeneous layer is formed. Its composition consists of a mixture of different suboxides SiOx (1 < x ⩽ 2) on top of a further reduced TiO2 surface. Upon Si coverage, the characteristic (1 × 2) LEED pattern from the substrate is completely attenuated, indicating absence of long-range order. Annealing the SiOx overlayer results in the formation of suboxides with different stoichiometry. The LEED pattern recovers the characteristic TiO2 (1 1 0)-(1 × 2) diagram. LEED I–V curves from both, substrate and overlayer, indicate the formation of nanometric sized SiOx clusters.
Publisher version (URL)https://doi.org/10.1016/j.susc.2006.04.023
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