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Predictable quantum efficient detector based on n-type silicon photodiodes

AutorDönsberg, Timo; Manoocheri, Farshid; Sildoja, Meelis; Juntunen, Mikko; Tuovinen, Esa; Ronkainen, Hannu; Prunnila, M.; Merimaa, Mikko; Tang, C. K.; Gran, J.; Müller, Ingmar; Werner, Lutz; Tougié, Bernard; Pons Aglio, Alicia ; Smid, M.; Gal, Peter; Lolli, Lapo; Brida, Giorgio; Rastello, María Luisa; Ikonen, Erkki
Fecha de publicación13-jun-2017
Citación13th International Conference on New Developments and Applications in Optical Radiometry (2017)
ResumenWe have designed, manufactured, modelled and characterized a new type of predictable quantum efficient detector (PQED) based on n-type induced junction photodiodes. The photodiodes utilize an Al2O3 layer grown on top of n-type silicon substrate using atomic layer deposition. Two sets of photodiodes with varying doping concentrations were fabricated. For both sets, the modelled and measured responsivities were congruent within the measurement and modelling uncertainties of around 100 ppm. Thus, the new design is a good alternative to the existing PQEDs, where p-type silicon and a thermally grown SiO2 layer are used. A novel experimental method was developed to obtain values of the 3D model parameters giving increased credibility to the PQED as a primary standard
DescripciónNEWRAD 2017, Miraikan Hall, in Odaiba, Tokyo 13 - 16 June, 2017
URIhttp://hdl.handle.net/10261/168102
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