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Control of Polar Orientation and Lattice Strain in Epitaxial BaTiO3 Films on Silicon

AuthorsLyu, Jike; Estandía, Saúl; Gázquez, Jaume CSIC ORCID; Chisholm, Matthew F.; Fina, Ignasi CSIC ORCID CVN ; Dix, Nico CSIC ORCID; Fontcuberta, Josep CSIC ORCID; Sánchez Barrera, Florencio CSIC ORCID
KeywordsFerroelectric oxides
Epitaxial oxides on silicon
Strain engineering
Barium titanate
Pulsed laser deposition
Dipoles maps
Issue Date9-Jul-2018
PublisherAmerican Chemical Society
CitationACS Applied Materials and Interfaces: 10.1021/acsami.8b07778 (2018)
AbstractConventional strain engineering of epitaxial ferroelectric oxide thin films is based on the selection of substrates with suitable lattice parameter. Here we show that the variation of oxygen pressure during pulsed laser deposition is a flexible strain engineering method for epitaxial ferroelectric BaTiO3 films either on perovskite substrates or on Si(001) wafers. This unconventional growth strategy permits continuous tuning of strain up to high levels (ε>0.8%) in films of thickness exceeding of a hundred of nanometers, as well as selecting the polar axis orientation to be either parallel or perpendicular to the substrate surface plane.
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