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Unidimensional photocurrent model for induced-junction photodiodes

AutorBorreguero, E. ; Ferrero, Alejandro ; Campos Acosta, Joaquín ; Pons Aglio, Alicia ; Hernanz, María Luisa
Fecha de publicación13-jun-2017
EditorInstitute of Physics Publishing
Citación13th International Conference on New Developments and Applications in Optical Radiometry (2017)
ResumenNumerical simulations are the common method to predict the response of a quantum efficient detector of induced-junction photodiodes at present. As alternative, an analytical model based on Ferrero et al. photocurrent analysis is proposed. Surface and bulk losses are modelled considering design and operation photodiode parameters and the characteristics of the incident beam. At short wavelengths the surface recombination velocity dominates the losses, whereas the bulk doping and reverse bias voltage determine the losses at long wavelengths. The losses predicted by the analytical model and reported simulations by other authors are in the same order of magnitude between 400 nm and 700 nm.
DescripciónNEWRAD 2017, Miraikan Hall, in Odaiba, Tokyo 13 - 16 June, 2017
URIhttp://hdl.handle.net/10261/167313
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