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Título

Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers

AutorPrieto, P.; Marco, J.F. ; Prieto, J. E.; Ruiz-Gómez, S.; Pérez, L.; del Real, R. P.; Vázquez, Manuel; de la Figuera, Juan
Fecha de publicación2018
EditorElsevier
CitaciónApplied Surface Science 436: 1067- 1074 (2018)
ResumenEpitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe, or ceramic, CoFeO, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFeO [100]/TiN [100]/Si [100]. Mössbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in-plane anisotropy depends on the lattice mismatch between CoFeO and TiN, which is larger for CoFeO thin films grown on the reactive sputtering process with ceramic targets.
URIhttp://hdl.handle.net/10261/166552
Identificadoresdoi: 10.1016/j.apsusc.2017.12.111
issn: 0169-4332
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