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Title: | Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers |
Authors: | Prieto, P.; Marco, J.F. ![]() ![]() |
Issue Date: | 2018 |
Publisher: | Elsevier |
Citation: | Applied Surface Science 436: 1067- 1074 (2018) |
Abstract: | Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe, or ceramic, CoFeO, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFeO [100]/TiN [100]/Si [100]. Mössbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in-plane anisotropy depends on the lattice mismatch between CoFeO and TiN, which is larger for CoFeO thin films grown on the reactive sputtering process with ceramic targets. |
URI: | http://hdl.handle.net/10261/166552 |
DOI: | http://dx.doi.org/10.1016/j.apsusc.2017.12.111 |
Identifiers: | doi: 10.1016/j.apsusc.2017.12.111 issn: 0169-4332 |
Appears in Collections: | (IQFR) Artículos |
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