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Direct Synthesis of Graphene on Silicon Oxide by low temperature Plasma Enhanced Chemical Vapor Deposition

AutorMuñoz, Roberto; Martínez-Orellana, Lidia ; López-Elvira, Elena; Munuera, C. ; Huttel, Yves ; García Hernández, M.
Fecha de publicación1-jun-2018
EditorRoyal Society of Chemistry (Great Britain)
CitaciónNanoscale 10(26): 12779-12787 (2018)
ResumenDirect graphene growth on silicon with native oxide using Plasma enhanced Chemical Vapour Deposition at low temperatures [550 ºC -650 ºC] is demonstrated for the first time. It is shown that fine tuning of a two step synthesis with gas mixtures C2H2/H2 yield monolayer and few layer graphene films with controllable domain size from 50 nm to more than 300 nm and sheet resistance ranging from 8 kΩ·sq-1 to less than 1.8 kΩ·sq-1 . Differences are understood in terms of the interaction of the plasma species -chiefly atomic H- with the deposited graphene and the native oxide layer. The proposed low temperature direct synthesis on an insulating substrate does not require any transfer processes and improves compatibility with current industrial processes.
Versión del editorhttp://dx.doi.org/10.1039/C8NR03210F
URIhttp://hdl.handle.net/10261/165686
DOI10.1039/C8NR03210F
ISSN2040-3364
E-ISSN2040-3372
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