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dc.contributor.authorCampos García, Antonioes_ES
dc.contributor.authorRiera Galindo, Sergies_ES
dc.contributor.authorPuigdollers, Joaquimes_ES
dc.contributor.authorMas Torrent, Martaes_ES
dc.date.accessioned2018-06-01T10:16:08Z-
dc.date.available2018-06-01T10:16:08Z-
dc.date.issued2018-05-09-
dc.identifier.citationACS Applied Materials and Interfaces 10(18): 15952–15961 (2018)es_ES
dc.identifier.issn1944-8244-
dc.identifier.urihttp://hdl.handle.net/10261/165506-
dc.description.abstractSolution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSC) lags behind their p-type counterparts. The trapping of electrons at the semiconductor–dielectric interface leads to a lower performance and operational stability. Herein we report printed small molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor–dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast oxidation of the OSC. Additionally, a CMOS-like inverter is fabricated depositing a p-type and n-type OSCs simultaneously.es_ES
dc.description.sponsorshipThis work was funded by the European Research Council (ERC) StG 2012-306826 e-GAMES project. The authors also thank the Networking Research Center on Bioengineering, Biomaterials, and Nanomedicine (CIBER-BBN); the Generalitat de Catalunya (2017-SGR-918); and the Spanish Ministry of Economy and Competitiveness, through the projects FANCY CTQ2016-80030-R and ENE2017-87671-C3-2-R, and through the “Severo Ochoa” Programme for Centers of Excellence in R&D (SEV-2015-0496). A.C. is enrolled in the Materials Science Program of UAB and acknowledges FPU fellowship from the Ministry.es_ES
dc.language.isoenges_ES
dc.publisherAmerican Chemical Societyes_ES
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/306826es_ES
dc.relationMINECO/ICTI2013-2016/CTQ2016-80030-Res_ES
dc.relationMINECO/ICTI2013-2016/ENE2017-87671-C3-2-Res_ES
dc.relationMINECO/ICTI2013-2016/SEV-2015-0496es_ES
dc.relation.isversionofPostprintes_ES
dc.rightsopenAccessen_EN
dc.subjectDensity-of-stateses_ES
dc.subjectHigh stabilityes_ES
dc.subjectn-typees_ES
dc.subjectOFETes_ES
dc.subjectSemiconductor−dielectric interfacees_ES
dc.titleReduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended n-Type Semiconductores_ES
dc.typeartículoes_ES
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1021/acsami.8b02851es_ES
dc.embargo.terms2019-05-09es_ES
dc.contributor.funderEuropean Research Counciles_ES
dc.contributor.funderCentro de Investigación Biomédica en Red Bioingeniería, Biomateriales y Nanomedicina (España)es_ES
dc.contributor.funderGeneralitat de Catalunyaes_ES
dc.contributor.funderMinisterio de Economía y Competitividad (España)es_ES
dc.relation.csices_ES
oprm.item.hasRevisionno ko 0 false*
dc.identifier.funderhttp://dx.doi.org/10.13039/501100003329es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100002809es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100005053es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100000781es_ES
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