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Título

Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended n-Type Semiconductor

AutorCampos García, Antonio ; Riera Galindo, Sergi; Puigdollers, Joaquim; Mas Torrent, Marta
Palabras claveDensity-of-states
High stability
n-type
OFET
Semiconductor−dielectric interface
Fecha de publicación9-may-2018
EditorAmerican Chemical Society
CitaciónACS Applied Materials and Interfaces 10(18): 15952–15961 (2018)
ResumenSolution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSC) lags behind their p-type counterparts. The trapping of electrons at the semiconductor–dielectric interface leads to a lower performance and operational stability. Herein we report printed small molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor–dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast oxidation of the OSC. Additionally, a CMOS-like inverter is fabricated depositing a p-type and n-type OSCs simultaneously.
Versión del editorhttp://dx.doi.org/10.1021/acsami.8b02851
URIhttp://hdl.handle.net/10261/165506
ISSN1944-8244
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