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dc.contributor.authorPérez Rodríguez, Anaes_ES
dc.contributor.authorTemiño, Inéses_ES
dc.contributor.authorOcal, Carmenes_ES
dc.contributor.authorMas Torrent, Martaes_ES
dc.contributor.authorBarrena, Estheres_ES
dc.date.accessioned2018-03-09T09:35:16Z-
dc.date.available2018-03-09T09:35:16Z-
dc.date.issued2018-02-28-
dc.identifier.citationACS Applied Materials and Interfaces 10(8): 7296-7303 (2018)es_ES
dc.identifier.issn1944-8244-
dc.identifier.urihttp://hdl.handle.net/10261/161898-
dc.description.abstractDisentangling the details of the vertical distribution of the small semiconductor molecules blended with polystyrene (PS) and the contacts properties are issues of fundamental value for designing strategies to optimize small molecule/polymer blend organic transistors. These questions are addressed here for ultra-thin blends of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) and PS processed by a solution-shearing technique using three different blend composition ratios. We show that friction force microscopy (FFM) allows the determination of the lateral and vertical distribution of the two materials at the nanoscale. Our results demonstrate a three layer stratification of the blend: a film of C8-BTBT of few molecular layers with crystalline order sandwiched between a PS-rich layer at the bottom (a few nm thick) acting as passivating dielectric layer and a PS-rich skin layer on the top (~1nm) conferring stability to the devices. Kelvin probe force microscopy (KPFM) measurements performed in operating organic field-effect transistors (OFETs) reveal that the devices are strongly contact limited and suggest contact doping as route for device optimization. By excluding the effect of the contacts, field-effect mobility values in the channel as high as 10 cm2V-1s-1 are obtained. Our findings, obtained via a combination of FFM and KPFM, provide a satisfactory explanation of the different electrical performance of the OFETs as a function of the blend composition ratio and by doping the contacts.es_ES
dc.description.sponsorshipThis work has been supported by the ERC StG 2012-306826 e-GAMES, Networking Research Center on Bioengineering, Biomaterials, and Nanomedicine (CIBER-BBN), the Generalitat de Catalunya (2014-SGR-17 and 2014- SGR-501) and the Spanish Government under projects MAT2013-47869-C4-1-P, MAT2016-77852-C2-1-R and FANCY CTQ2016-80030-R. We acknowledge the MINECO project MAT2015-68994-REDC and the ‘‘Severo Ochoa’’ Program for Centers of Excellence in R&D (SEV-2015-0496). I.T. and A.P.-R. are enrolled in the Materials Science PhD program of Universitat Autònoma de Barcelona and I.T. acknowledges FPU fellowship from the Spanish Ministry.es_ES
dc.language.isoenges_ES
dc.publisherAmerican Chemical Societyes_ES
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/306826es_ES
dc.relationMINECO/ICTI2013-2016/MAT2013-47869-C4-1-Pes_ES
dc.relationMINECO/ICTI2013-2016/MAT2016-77852-C2-1-Res_ES
dc.relationMINECO/ICTI2013-2016/CTQ2016-80030-Res_ES
dc.relationMINECO/ICTI2013-2016/MAT2015-68994-REDCes_ES
dc.relationMINECO/ICTI2013-2016/SEV-2015-0496es_ES
dc.relation.isversionofPostprintes_ES
dc.rightsopenAccessen_EN
dc.subjectOrganic semiconductorses_ES
dc.subjectFriction anisotropyes_ES
dc.subjectAFMes_ES
dc.subjectOFETses_ES
dc.subjectC8-BTBTes_ES
dc.titleDecoding the Vertical Phase Separation and Its Impact on C8-BTBT/PS Transistor Propertieses_ES
dc.typeArtículoes_ES
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1021/acsami.7b19279es_ES
dc.embargo.terms2019-02-28es_ES
dc.contributor.funderEuropean Research Counciles_ES
dc.contributor.funderCentro de Investigación Biomédica en Red Bioingeniería, Biomateriales y Nanomedicina (España)es_ES
dc.contributor.funderGeneralitat de Catalunyaes_ES
dc.contributor.funderMinisterio de Economía y Competitividad (España)es_ES
dc.relation.csices_ES
oprm.item.hasRevisionno ko 0 false*
dc.identifier.funderhttp://dx.doi.org/10.13039/501100000781es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100003329es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100002809es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100005053es_ES
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