English   español  
Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/161106
logo share SHARE   Add this article to your Mendeley library MendeleyBASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Effect of temperature on the growth of single crystalline monolayer graphene by Chemical Vapor Deposition (CVD)

AutorGebeyehu, Zewdu M.; Cuppens, Jo; Esplandiú, María J. ; Valenzuela, Sergio O.
Fecha de publicación2016
CitaciónGraphene 2016
ResumenThe ever increasing interest in graphene properties and its applications has motivated the controlled growth of high-quality graphene and fabrication of graphene-based devices. The growth of graphene via CVD using metal catalysts depends on both the intrinsic properties of the metal catalysts and the growth parameters. Here we demonstrate that the structure of single layer graphene flakes grown on a copper substrate by low pressure CVD depends dramatically on the furnace temperature, within a few tens of degrees Celsius. Optical microscope analysis of as-grown and transferred graphene onto SiO2/Si shows that growth at 1000ºC results in dendritic shapes while growth at 1040ºC gives a compact graphene flake. The low temperature growth was extended over a long time (1 hour) in order to check if there was a change in the structure towards a compact flake as the one in Figure b, which was obtained after just 10 minutes of growth time at 1040ºC. However, the size of the dendrites increased without merging. Although still poorly understood, the dendritic growth may be due to the poor smoothening of the copper at the lower annealing temperatures and to the low carbon attachment/detachment kinetics at the graphene growth fronts. We have characterized the charge and spin transport properties of the graphene grown at low temperatures. We have fabricated non-local spin valve devices with 3 μm graphene channel length and found a spin life time of 0.2 ns and spin diffusion length of 2.5 μm at room temperature. The mobility of the device was of 1000 cm2 /Vs, which is typical for CVD grown graphene on SiO2/Si. Future work will focus on comparing these results with the spintronic performance of graphene grown at higher temperatures.
DescripciónResumen del póster presentado a la 6th edition of Graphene Conference series, the largest European Event in Graphene and 2D Materials, celebrada en Genova (Italia) del 19 al 22 de abril de 2016.
Aparece en las colecciones: (CIN2) Comunicaciones congresos
Ficheros en este ítem:
Fichero Descripción Tamaño Formato  
accesoRestringido.pdf15,38 kBAdobe PDFVista previa
Mostrar el registro completo

NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.