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Spin transport in graphene: from fundamental relaxation mechanism to spin hall effect

AuthorsRoche, Stephan
Issue Date2016
CitationE-MRS Spring Meeting (2016)
AbstractIn 2009, the estimation of intrinsic and Rashba spin-orbit coupling interaction in clean graphene were found to lie in the ?eV range, which together with the absence of a hyperfine interaction, yield to calculation of spin lifetimes for supported graphene in the unbelievable micro or even milliseconds. In all other materials, metals and semiconductors, the best measured values at room temperature in ?ballistic systems? have been limited to the nanosecond scale. Therefore such theoretical prediction has sparked a lot of expectations heralding graphene as an exceptional (unrivalled) material for the development of lateral spintronic. However, despite monumental efforts and progress in improving graphene quality, resolving contact issues, and reducing substrate effects, the experimentally estimated spin lifetime remains too many orders of magnitude shorter (from 3 to 6 !), even for best mobility samples, with the mysterious incapacity to surpass the nanosecond scale after almost one decade of intense works. This could misleadingly be seen as a critical issue for the advent of practical graphene spintronic, as well as beyond concerning spin transport in all Dirac matter (topological insulators, 3D Dirac semimetal?). In this talk, I will discuss spin transport in graphene based materials, accounting for the effect of substrate, impurities, and ad-atoms and using a fully quantum description of spin dynamics which goes beyond the usual semi-classical theory and conventional approximations made in the literature. The role of spin-pseudospin entanglement in driving spin dephasing and relaxation will be discussed in the ultraclean limit for which electron-hole puddles and micron eV spin-orbit interaction are actually enough to capture the essentials of spin lifetimes observed experimentally. I will further present how chemical functionalization can be further harvested to generate multiple quantum phases and how surface distribution of ad-atoms drives a crossover from the Quantum Spin Hall state to the Spin Hall effect in graphene; a cornerstone spin manipulation phenomenon for the design of innovative spin-based device applications such as zero-power spin processing technologies.
DescriptionResumen del trabajo presentado al E-MRS Spring Meeting: Symposium Z: Two-dimensional crystals and van der Waals heterostructures for nanoelectronics, celebrado en Lille (Francia) del 2 al 6 de mayo de 2016.
Appears in Collections:(CIN2) Comunicaciones congresos
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