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Electronic structure of boron doped graphene nanoribbons

AutorCorso, M.; Carbonell, Eduard; Vasseur, Guillaume; García-Lekue, Aran; Lobo-Checa, Jorge ; Oteyza, D. G. de ; Ortega, J. Enrique ; Sánchez-Portal, Daniel ; Pascual, José I.
Fecha de publicación2016
EditorCSIC-ICN Centro de Investigación en Nanociencia y Nanotecnología (CIN2)
CitaciónFuerzas y Túnel (2016)
ResumenGraphene Nanoribbons (GNRs) are one dimensional stripes of graphene. Their electronic and magnetic properties depend on their width and edge structure. Armchair graphene nanoribbons (AGNRs) have a width dependent electronic gap which makes them suitable for applications in carbon-based nanoelectronics. On-surface reaction of halogenated bianthracene (DBBA) monomers is one of the most successful processes to tailor the dimensions and the edges of GNRs with atomic precision. Chemical modification of these precursors provides a tool to modify the electronic structure of AGNR, and obtain band gaps in a range suitable for semiconducting and optoelectronic applications. In this work we grow boron doped 7-AGNRs with boron atom pairs substituents along the GNR backbone (2B-7-AGNR) on Au(111) and Au(223) surfaces by using chemically modified DBBA molecules. By means of LT-STM, ARPES and DFT calculations we characterize in detail the electronic structure of 2B-7-AGNR. We find that B atoms, closer to the Au surface than carbons, induce a strong p-doping of 7-AGNRs valence band. The diboron backbone induces the formation of a new conduction band that results from the hybridization of the borns pz states and the Au surface state. The band gap for 2B-7-AGNR measured by STS amounts to ~0.9 eV, almost 40% less than the pristine 7-AGNR.
DescripciónResumen del póster presentado a la 10th Conferencia Fuerzas y Túnel, celebrada en Girona (España) del 5 al 7 de septiembre de 2016.-- et al.
URIhttp://hdl.handle.net/10261/160843
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