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Title

Highly-ordered wide bandgap materials for quantized anomalous Hall and magnetoelectric effects

AuthorsOtrokov, M. M.; Menshchikova, Tatiana V.; Vergniory, M.; Rusinov, Igor P.; Koroteev, Yuri M.; Bihlmayer, G.; Ernst, A.; Echenique, Pedro M. ; Arnau, Andrés ; Chulkov, Eugene V.
Issue Date2017
Citation1st Workshop Spain-Taiwan: "2D Materials and Interfaces for Spintronics" (2017)
AbstractAn interplay of spin-orbit coupling and intrinsic magnetism is known to give rise to the quantum anomalous Hall and topological magnetoelectric effects under certain conditions. Their realization could open access to low power consumption electronics as well as many fundamental phenomena like image magnetic monopoles, Majorana fermions and others. Unfortunately, being realized very recently, these effects are only accessible at extremely low temperatures and the lack of appropriate materials that would enable the temperature increase is a most severe challenge. Presented in this talk is a novel material platform with unique combination of properties that is perfectly suitable for the realization of both effects at elevated temperatures. The key element of the computational material design is an extension of a topological insulator surface by a thin film of ferromagnetic insulator, which is both structurally and compositionally compatible with the topological insulator. Following this proposal, we suggest a variety of specific systems and discuss their numerous advantages, in particular wide band gaps with the Fermi level located in the gap. A recent experimental realization of such a design is also described in the talk.
DescriptionResumen del trabajo presentado al 1st Workshop Spain-Taiwan: "2D Materials and Interfaces for Spintronics", celebrado en Barcelona (España) del 23 al 25 de octubre de 2017.-- et al.
URIhttp://hdl.handle.net/10261/160620
Appears in Collections:(CFM) Comunicaciones congresos
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