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Spin anisotropy of graphene in heterostructure of graphene/TI system

AutorSong, Kenan; Cummings, Aron W.; Robles, Roberto ; Soriano, David ; Rontomé, P. O.; Roche, Stephan
Fecha de publicación2017
Citación1st Workshop Spain-Taiwan: "2D Materials and Interfaces for Spintronics" (2017)
ResumenRecent studies pointed out that proximity to TI could enhance the spin-orbit coupling (SOC) strength in graphene and produce a topologically-protected state which is similar to that in TIs. It is quite interesting to study such a heterostucture system of graphene and TI because it preserves both long spin lifetime and the spin-momentum locking phenomenon on the graphene layer. In this work, one monolayer of graphene with a √3 x √3 supercell was laid on top of a slab of TI with a thickness of six quintuple layers (QLs; shown in fig. a. & b.) in order to examine the electronic structure induced in graphene through DFT calculation. The band gap of graphene is enlarged (~3.4 meV), due to the Kekulé C-C bonding distortion in the heterostructure and enhanced intrinsic SOC strength, and there is 2.8 meV Rashba-type splitting between bands as well, which results from the out-of-plane Rashba SOC induced by TI film. On the other hand, calculation of the expectation value for spin operator shows that graphene holds an atypical Rashba-type spin texture. Then, a TB hamiltonain (illustrated in figure c.) was also generated, by fitting to the DFT band structure, and TB results show the same trend as DFT ones for the electronic structure. More details of the DFT and TB results will be shown in the poster.
DescripciónResumen del póster presentado al 1st Workshop Spain-Taiwan: "2D Materials and Interfaces for Spintronics", celebrado en Barcelona (España) del 23 al 25 de octubre de 2017.
URIhttp://hdl.handle.net/10261/160595
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