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Non-local resistance in CVD graphene: edge states, line defects and magnetic-field asymmetric signals

AuthorsPower, Stephen R.; Ribeiro, Mário; Hueso, Luis E.; Casanova, Fèlix; Roche, Stephan
Issue Date2017
Citation1st Workshop Spain-Taiwan: "2D Materials and Interfaces for Spintronics" (2017)
AbstractThe observation of large nonlocal resistances near the Dirac point in graphene has been related to a variety of intrinsic Hall effects, in which the spin or valley degrees of freedom are controlled by symmetry breaking mechanisms. In turn, the engineering of strong spin Hall or valley Hall signals could stimulate further practical developments of spintronics and valleytronics, provided they rely on scalable graphene devices. However, recent experiments report scale-invariant nonlocal transport fingerprints in largescale CVD-grown graphene samples, under the application of an external magnetic field. Such signals are inconsistent with mechanisms relying on the creation of pure bulk spin or valley currents. Instead, they are explained by the emergence of field-induced counterpropagating edge states near the charge neutrality point. Here we demonstrate that such signals are sensitive to the polycrystalline morphology of CVD graphene, and that transmission along line defects such as grain boundaries acts to shunt the insulating bulk and reduce non-local signals. Furthermore, electron-hole asymmetries due to local charge puddles or sublattice effects can result in a dramatic dependence of the nonlocal signal on the sign of the magnetic field.
DescriptionResumen del póster presentado al 1st Workshop Spain-Taiwan: "2D Materials and Interfaces for Spintronics", celebrado en Barcelona (España) del 23 al 25 de octubre de 2017.
Appears in Collections:(CIN2) Comunicaciones congresos
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