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Magnetic proximity effects in topological insulator/magnetic insulator heterostructures

AutorFigueroa, Adriana I.; Bonell, Fréderic; Valenzuela, Sergio O.
Fecha de publicación2017
Citación1st Workshop Spain-Taiwan: "2D Materials and Interfaces for Spintronics" (2017)
ResumenTopological insulators (TIs) are novel class of materials with promising electronic properties that could allow for dissipationless carrier transport in future electronic and spintronic devices through their spinmomentum locked surface states. Combination of TIs with magnetic materials has become one the main strategies for their practical use due to the emergence of novel magneto-electric effects. Recent reports on TI thin films in direct contact with magnetic insulators (MI) have revealed interesting phenomena at the TI/MI interface. However, the mechanisms for magnetic proximity and electronic transport at these interfaces are not completely understood and therefore not well controlled. Investigation of these effects would yield to the observation of exotic magneto-electric phenomena, such as the quantum anomalous Hall effect, as well as incorporation of TIs into future devices. Thus, we have grown Bi2Te3/EuS heterostructures using molecular beam epitaxy with the aim of studying magnetic proximity effects. In this work, we will show results of structural, magnetic and magneto-electrical properties of these heterostructures using a variety of characterization techniques.
DescripciónResumen del póster presentado al 1st Workshop Spain-Taiwan: "2D Materials and Interfaces for Spintronics", celebrado en Barcelona (España) del 23 al 25 de octubre de 2017.
URIhttp://hdl.handle.net/10261/160589
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