English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/160186
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Low-temperature growth of axial Si/Ge nanowire heterostructures enabled by trisilane

AuthorsHui, Ho Yee; Mata, Maria de la; Arbiol, Jordi; Filler, Michael A.
Issue Date2017
PublisherAmerican Chemical Society
CitationChemistry of Materials 29(8): 3397-3402 (2017)
AbstractAxial Si/Ge heterostructure nanowires, despite their promise in applications ranging from electronics to thermal transport, remain notoriously difficult to synthesize. Here, we grow axial Si/Ge heterostructures at low temperatures using a Au catalyst with a combination of trisilane and digermane. This approach yields, as determined with detailed electron microscopy characterization, arrays of epitaxial Si/Ge nanowires with excellent morphologies and purely axial composition profiles. Our data indicate that heterostructure formation can occur via the vapor-liquid-solid or vapor-solid-solid mechanism. These findings highlight the importance of precursor chemistry in semiconductor nanowire synthesis and open the door to Si/Ge nanowires with programmable quantum domains.
Identifiersdoi: 10.1021/acs.chemmater.6b03952
e-issn: 1520-5002
issn: 0897-4756
Appears in Collections:(CIN2) Artículos
Files in This Item:
File Description SizeFormat 
accesoRestringido.pdf15,38 kBAdobe PDFThumbnail
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.