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Título

Heteroepitaxial beta-Ga2O3 on 4H-SiC for an FET with reduced self heating

AutorRussell, Stephen A. O.; Pérez-Tomás, Amador ; Fisher, Craig A.; Hamilton, Dean P.
Palabras claveFET
Gallium oxide
Molecular beam epitaxy
Normally-off
Self-heating
Silicon carbide
Threshold voltage
Fecha de publicación2017
EditorInstitute of Electrical and Electronics Engineers
CitaciónIEEE Journal of the Electron Devices Society 5(4): 256-261 (2017)
ResumenA method to improve thermal management of β-Ga2O3 FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overall performance. For the same operating parameters an 18% increase in peak drain current and 15% reduction in lattice temperature are observed. Device dimensions may be substantially reduced without detriment to performance and normally off operation may be achieved.
Descripciónet al.
Versión del editorhttps://doi.org/10.1109/JEDS.2017.2706321
URIhttp://hdl.handle.net/10261/160149
DOI10.1109/JEDS.2017.2706321
ISSN2168-6734
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