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Título

Effect of the annealing on the power factor of un-doped cold-pressed SnSe

AutorMorales Ferreiro, J. O.; Reparaz, J. S. ; Sotomayor Torres, C. M. ; Luo, T.
Palabras claveFigure-of-merit ZT
Electrical conductivity
Seebeck coefficient
SEM
XRD
Thermal conductivity
Fecha de publicación2017
EditorElsevier
CitaciónApplied Thermal Engineering 111: 1426-1432 (2017)
ResumenTin Selenide (SnSe), a thermoelectric material of the chalcogenide family, has attracted tremendous interest in the past few years due to its unprecedented thermoelectric figure-of-merit, ZT, of 2.6. In this work we have carried out an experimental study of the impact of annealing on the thermoelectric properties of polycrystalline SnSe formed by cold-pressing un-doped SnSe powders with a Hall carrier concentration of 5.37 × 10 cm. The crystalline structure and morphology of the samples are characterized and properties, including electrical conductivity, Seebeck coefficient and thermal conductivity, are measured. It is found that thermal annealing has a large impact on both the microstructure and the thermoelectric properties. Notably, annealing leads to re-alignment of crystalline domains, increase in Seebeck coefficient by a factor of as much as 3, and increase in the electrical conductivity. A peak ZT of 0.11 was achieved at 772 K which is smaller than un-doped polycrystalline SnSe.
Descripciónet al.
URIhttp://hdl.handle.net/10261/160072
Identificadoresdoi: 10.1016/j.applthermaleng.2016.07.198
issn: 1359-4311
e-issn: 1873-5606
Aparece en las colecciones: (CIN2) Artículos
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