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dc.contributor.authorLähnemann, Jonas-
dc.contributor.authorDen Hertog, Martien-
dc.contributor.authorHille, Pascal-
dc.contributor.authorMata, Maria de la-
dc.contributor.authorFournier, Thierry-
dc.contributor.authorSchörmann, Jörg-
dc.contributor.authorArbiol, Jordi-
dc.contributor.authorEickhoff, Martin-
dc.contributor.authorMonroy, Eva-
dc.date.accessioned2018-02-02T08:36:59Z-
dc.date.available2018-02-02T08:36:59Z-
dc.date.issued2016-
dc.identifierdoi: 10.1021/acs.nanolett.6b00806-
dc.identifiere-issn: 1530-6992-
dc.identifierissn: 1530-6984-
dc.identifier.citationNano Letters 16(5): 3260-3267 (2016)-
dc.identifier.urihttp://hdl.handle.net/10261/160060-
dc.descriptionarXiv:1604.07978v2-
dc.description.abstractWe have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional GaN shell around the heterostructures. In the absence of a surface conduction channel, the incorporation of the heterostructure leads to a decrease of the dark current and an increase of the photosensitivity. A significant dispersion in the magnitude of dark currents for different single nanowires is attributed to the coalescence of nanowires with displaced nanodisks, reducing the effective length of the heterostructure. A larger number of active nanodisks and AlN barriers in the current path results in lower dark current and higher photosensitivity and improves the sensitivity of the nanowire to variations in the illumination intensity (improved linearity). Additionally, we observe a persistence of the photocurrent, which is attributed to a change of the resistance of the overall structure, particularly the GaN stem and cap sections. As a consequence, the time response is rather independent of the dark current.-
dc.description.sponsorshipFinancial support from the EU ERC-SG “TeraGaN” (#278428) and ANR JCJC COSMOS (ANR-12-JS10-0002) is acknowledged. Furthermore, the groups in Grenoble and Giessen received traveling support from the DAAD/Campus France program Procope. P.H., J.S., and M.E. acknowledge financial support within the LOEWE program of excellence of the Federal State of Hessen (project initiative STORE-E). M.d.l.M. and J.A. acknowledge funding from Generalitat de Catalunya 2014 SGR 1638 and the Spanish MINECO MAT2014-51480-ERC (e-ATOM) and Severo Ochoa Excellence Program.-
dc.publisherAmerican Chemical Society-
dc.relationMINECO/ICTI2013-2016/MAT2014-51480-ERC-
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/278428-
dc.relation.isversionofPreprint-
dc.rightsopenAccess-
dc.subjectGaN-
dc.subjectPhotoluminescence spectroscopy-
dc.subjectUV photodetector-
dc.subjectNanowires-
dc.subjectAlN-
dc.subjectPhotocurrent spectroscopy-
dc.titleUV photosensing characteristics of nanowire-based GaN/AlN superlattices-
dc.typeartículo-
dc.relation.publisherversionhttps://doi.org/10.1021/acs.nanolett.6b00806-
dc.date.updated2018-02-02T08:36:59Z-
dc.description.versionPeer Reviewed-
dc.language.rfc3066eng-
dc.contributor.funderEuropean Research Council-
dc.contributor.funderGeneralitat de Catalunya-
dc.contributor.funderMinisterio de Economía y Competitividad (España)-
dc.contributor.funderAgence Nationale de la Recherche (France)-
dc.contributor.funderState of Hesse-
dc.relation.csic-
dc.identifier.funderhttp://dx.doi.org/10.13039/501100001665es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100003329es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100002809es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100000781es_ES
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