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Surface hydrogen enables subeutectic vapor-liquid-solid semiconductor nanowire growth

AutorSivaram, Saujan V.; Hui, Ho Yee; Mata, Maria de la; Arbiol, Jordi; Filler, Michael A.
Palabras claveGermanium
Semiconductor nanowire
Hydrogen
Vapor−liquid−solid mechanism
Fecha de publicación2016
EditorAmerican Chemical Society
CitaciónNano Letters 16(11): 6717-6723 (2016)
ResumenVapor-liquid-solid nanowire growth below the bulk metal-semiconductor eutectic temperature is known for several systems; however, the fundamental processes that govern this behavior are poorly understood. Here, we show that hydrogen atoms adsorbed on the Ge nanowire sidewall enable AuGe catalyst supercooling and control Au transport. Our approach combines in situ infrared spectroscopy to directly and quantitatively determine hydrogen atom coverage with a >regrowth> step that allows catalyst phase to be determined with ex situ electron microscopy. Maintenance of a supercooled catalyst with only hydrogen radical delivery confirms the centrality of sidewall chemistry. This work underscores the importance of the nanowire sidewall and its chemistry on catalyst state, identifies new methods to regulate catalyst composition, and provides synthetic strategies for subeutectic growth in other nanowire systems.
URIhttp://hdl.handle.net/10261/159937
Identificadoresdoi: 10.1021/acs.nanolett.6b01640
e-issn: 1530-6992
issn: 1530-6984
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