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High Performance Organic Field-Effect Transistors with Solid and Aqueous Dielectric Based on a Solution Sheared Sulfur-Bridged Annulene Derivative

AutorCampos García, Antonio ; Qiaoming, Zhang; Ajayakumar, Murugan; Leonardi, Francesca ; Mas Torrent, Marta
Palabras claveBar-assisted meniscus shearing
Electrolyte-gated field-effect transistors
Organic field-effect transistors
Organic semiconductor:polymer blends
Solution shearing techniques
Fecha de publicación28-dic-2017
CitaciónAdvanced Electronic Materials: 10.1002/aelm.201700349 (2017)
ResumenThin films of the organic semiconductor meso-diphenyl tetrathia[22]annulene[2,1,2,1] (DPTTA) are prepared for the first time employing solution-based techniques to fabricate organic field-effect transistors (OFETs). Homogeneous and crystalline films of this semiconductor are achieved, thanks to the synergic approach of employing blends of this material with polystyrene (PS) and the high throughput technique bar-assisted meniscus shearing (BAMS) with a hydrophobic bar. The resulting active layers exhibit state-of-the-art OFET performance with an average mobility of 1 cm2 V−1 s−1, threshold voltage close to 0 V, high on/off ratio, and sharp switch on. Furthermore, a DPTTA:PS formulation is optimized to prepare films suitable for their integration in electrolyte-gated field effect transistors operating in ultrapure water and 0.5 m NaCl aqueous solution. Such devices also reveal excellent performance with mobility values above 0.1 cm2 V−1 s−1, potentiometric sensitivity ≈200 µV, time response ≈9 ms, and long term stability in ultrapure water. Hence, this work supports the strategy of combining organic semiconductor:polymer blends with BAMS as a powerful route for achieving high performing devices, and also points out DPTTA as a highly promising material to be integrated in organic electronic devices.
Versión del editorhttp://dx.doi.org/10.1002/aelm.201700349
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