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Improved channel mobility by oxide nitridation for n-channel MOSFET on 3C-SiC(100)/Si

AuthorsLi, Fan; Pérez-Tomás, Amador CSIC ORCID; Shah, V. A.
KeywordsChannel mobility
Oxidation temperature
Gate nitridation
3C-SiC on Si
Issue Date2016
PublisherTrans Tech Publications
CitationMaterials Science Forum 858: 667-670 (2016)
AbstractIn this work we studied the gate oxidation temperature and nitridation influences on the resultant 3C-SiC MOSFET forward characteristics. Conventional long channel lateral MOSFETs were fabricated on 3C-SiC(100) epilayers grown on Si substrates using five different oxidation processes. Both room temperature and high temperature (up to 500K) forward IV performance were characterised, and channel mobility as high as 90cm2 /V.s was obtained for devices with nitrided gate oxide, considerable higher than the ones without nitridation process (~70 cm2/V.s).
Descriptionet al.
Identifiersdoi: 10.4028/www.scientific.net/MSF.858.667
issn: 0255-5476
e-issn: 1662-9752
Appears in Collections:(CIN2) Artículos
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