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Title

α,ω -dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors

AuthorsSchamoni, Hannah; Noever, Simon; Nickel, Bert; Stutzmann, Martin; Garrido, Jose A.
KeywordsThin film deposition
Field effect transistors
Carrier mobility
Organic semiconductors
Thin film structure
Issue Date2016
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 108(7): 073301 (2016)
AbstractWhile organic semiconductors are being widely investigated for chemical and biochemical sensing applications, major drawbacks such as the poor device stability and low charge carrier mobility in aqueous electrolytes have not yet been solved to complete satisfaction. In this work, solution-gated organic field-effect transistors (SGOFETs) based on the molecule α,ω-dihexyl-sexithiophene (DH6T) are presented as promising platforms for in-electrolyte sensing. Thin films of DH6T were investigated with regard to the influence of the substrate temperature during deposition on the grain size and structural order. The performance of SGOFETs can be improved by choosing suitable growth parameters that lead to a two-dimensional film morphology and a high degree of structural order. Furthermore, the capability of the SGOFETs to detect changes in the pH or ionic strength of the gate electrolyte is demonstrated and simulated. Finally, excellent transistor stability is confirmed by continuously operating the device over a period of several days, which is a consequence of the low threshold voltage of DH6T-based SGOFETs. Altogether, our results demonstrate the feasibility of high performance and highly stable organic semiconductor devices for chemical or biochemical applications.
Publisher version (URL)http://dx.doi.org/10.1063/1.4942407
URIhttp://hdl.handle.net/10261/159386
Identifiersdoi: 10.1063/1.4942407
issn: 0003-6951
e-issn: 1077-3118
Appears in Collections:(CIN2) Artículos
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