English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/159335
Share/Impact:
Statistics
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:
Title

Conductance of threading dislocations in InGaAs/Si stacks by temperature-CAFM measurements

AuthorsCouso, C.; Domingo, Neus ; Bersuker, G.
Issue Date2016
PublisherInstitute of Electrical and Electronics Engineers
CitationIEEE Electron Device Letters 37(5): 640-643 (2016)
AbstractThe stacks of III-V materials, grown on the Si substrate, that are considered for the fabrication of highly scaled devices tend to develop structural defects, in particular threading dislocations (TDs), which affect device electrical properties. We demonstrate that the characteristics of the TD sites can be analyzed by using the conductive atomic force microscopy technique with nanoscale spatial resolution within a wide temperature range. In the studied InGaAs/Si stacks, electrical conductance through the TD sites was found to be governed by the Poole-Frenkel emission, while the off-TDs conductivity is dominated by the thermionic emission process.
Descriptionet al.
URIhttp://hdl.handle.net/10261/159335
Identifiersdoi: 10.1109/LED.2016.2537051
e-issn: 1558-0563
issn: 0741-3106
Appears in Collections:(CIN2) Artículos
Files in This Item:
File Description SizeFormat 
accesoRestringido.pdf15,38 kBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 

Related articles:


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.