Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/159230
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Title

3C-SiC transistor with ohmic contacts defined at room temperature

AuthorsLi, Fan; Fisher, Craig A.; Pérez-Tomás, Amador CSIC ORCID
KeywordsFabrication
Silicon carbide
Logic gates
Metals
Annealing
MOSFET
Ohmic contacts
Issue Date2016
PublisherInstitute of Electrical and Electronics Engineers
CitationIEEE Electron Device Letters 37(9): 1189-1192 (2016)
AbstractAmong all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. Here, we present a low resistivity (~3 × 10-5 Ω · cm2) ohmic contact formed by directly depositing a Ti/Ni metal stack on n-type 3C-SiC without any extra annealing. For the first time, 3C-SiC lateral MOSFETs with asdeposited ohmic contacts were fabricated, and it turned out not only the ohmic contact is free from any interface voids, but also a higher field-effect mobility value (~80 cm2/V · s) was achieved compared with the annealed devices.
Descriptionet al.
URIhttp://hdl.handle.net/10261/159230
DOI10.1109/LED.2016.2593771
Identifiersdoi: 10.1109/LED.2016.2593771
issn: 0741-3106
Appears in Collections:(CIN2) Artículos

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