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Title

Ion implantation process of SiC single crystals: proposal and joint possibilities at the Centro Nacional de Aceleradores

AuthorsGarcía López, J. ; Jiménez-Ramos, M. C. ; Ferrer, F. J. ; Ortega-Feliú, I.
Issue Date2016
Citation1st IAEA Technical Meeting (2016)
AbstractFirst, the infrastructure available at CNA for Ion Beam Characterization and Modification of Materials, based on a 3 MV tandem accelerator and a compact cyclotron, will be briefly presented. Of particular interest for this Project is the possibility to produce pulsed beams using a simple fast-switch connected to the ion sources of the Tandem accelerator which is able to generate square pulses with variable width (minimum 50 ns) and frequency (maximum 50 kHz). Moreover, it is foreseen to set up shortly a beam buncher that will permit the use of shorter and more intense pulsed beams (width 1-3 ns for protons) with frequencies in the M Hz- 250 kHz range. Then, we will focus on the activity that our group has carried out in the last years in the field of Ion Beam Modification of Materials, in particular the study of the Ion implantation process of SiC single crystal substrates for applications as magnetic semiconductor. SiC epilayers grown on 4H-SiC single crystals were implanted with transition metals (Ni, Co) and non-magnetic ions (Si) at different temperatures. The disorder produced by the implantation between RT and 450 o c and the effect of the post-implantation annealing at 1100 o c on the recrystallization of the substrates was studied as a function of the fluence by Backscattering Spectrometry in channeling geometry. The asimplanted samples at RT showed a completely amorphous region which extends until the surface when irradiated with the highest dose, whereas in the case of 450 o c implantation amorphization does not occur. For partially damaged samples, SQUID measurements show ferromagnetic behaviour at RT, with coercive fields and saturation magnetization values very similar, regardless of the kind of substrate doping (p or n), implanted ion (Ni, Co, Si) and fluence. These results suggest that the structural defects may be correlated with the magnetic properties of the samples. Finally, we will discuss possible experiments to study the dynamics of color center formation in SiC using pulsed beams.
DescriptionResumen del trabajo presentado la 1st International Atomic Energy Agency (IAEA) Technical Meeting: "Ion Beam-Induced Spatio-Temporal Structural Evolution of Matter: Towards New Quantum Technologies", celebrado en la Universidad de Torino (Italia) del 23 al 27 de mayo de 2016.
URIhttp://hdl.handle.net/10261/159116
Appears in Collections:(CNA) Comunicaciones congresos
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