English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/158483
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:


Limitations of high pressure sputtering for amorphous silicon deposition

AuthorsGarcía-Hernansanz, R.; García-Hemme, E.; Montero, D.; Olea, J.; San Andrés, E.; Prado, A.; Ferrer, F. J. ; Mártil, I.; González-Díaz, G.
Issue Date2016
PublisherInstitute of Physics Publishing
CitationMaterials Research Express 3(3): 036401 (2016)
AbstractAmorphous silicon thin films were deposited using the high pressure sputtering (HPS) technique to study the influence of deposition parameters on film composition, presence of impurities, atomic bonding characteristics and optical properties. An optical emission spectroscopy (OES) system has been used to identify the different species present in the plasma in order to obtain appropriate conditions to deposit high purity films. Composition measurements in agreement with the OES information showed impurities which critically depend on the deposition rate and on the gas pressure. Weprove that films deposited at the highest RF power and 3.4 × 10−2 mbar, exhibit properties as good as the ones of the films deposited by other more standard techniques.
Identifiersdoi: 10.1088/2053-1591/3/3/036401
e-issn: 2053-1591
Appears in Collections:(CNA) Artículos
Files in This Item:
File Description SizeFormat 
accesoRestringido.pdf15,38 kBAdobe PDFThumbnail
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.