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Title

Band gap of corundumlike alpha-Ga2O3 determined by absorption and ellipsometry

AuthorsSegura, A.; Artús, Lluís ; Cuscó, Ramón ; Goldhahn, R.; Feneberg, M.
KeywordsThin-films
Optical-properties
GA2O3 Films
BETA-GA2O3
Deposition
Growth
Issue DateJul-2017
PublisherAmerican Physical Society
CitationPhysical Review Materials, 1(2): 024604 (2017)
AbstractThe electronic structure near the band gap of the corundumlike a phase of Ga2O3 has been investigated by means of optical absorption and spectroscopic ellipsometry measurements in the ultraviolet (UV) range (400-190 nm). The absorption coefficient in the UV region and the imaginary part of the dielectric function exhibit two prominent absorption thresholds with wide but well-defined structures at 5.6 and 6.3 eV which have been ascribed to allowed direct transitions from crystal-field split valence bands to the conduction band. Excitonic effects with large Gaussian broadening are taken into account through the Elliott-Toyozawa model, which yields an exciton binding energy of 110 meV and direct band gaps of 5.61 and 6.44 eV. The large broadening of the absorption onset is related to the slightly indirect character of the material.
Publisher version (URL)http://dx.doi.org/10.1103/PhysRevMaterials.1.024604
URIhttp://hdl.handle.net/10261/158207
DOI10.1103/PhysRevMaterials.1.024604
ISSN2475-9953
Appears in Collections:(ICTJA) Artículos
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