Por favor, use este identificador para citar o enlazar a este item:
http://hdl.handle.net/10261/154888
COMPARTIR / EXPORTAR:
SHARE CORE BASE | |
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE | |
Título: | Volume Resistive Switching in metallic perovskite oxides driven by the Metal-Insulator Transition |
Autor: | Gonzalez Rosillo, Juan Carlos CSIC ORCID; Ortega Hernandez, Rafael; Jareño Cerulla, Julia; Miranda, Enrique; Suñé, Jordi; Granados, Xavier CSIC ORCID; Obradors, Xavier CSIC ORCID; Palau, Anna CSIC ORCID; Puig Molina, Teresa CSIC ORCID | Palabras clave: | Resistive Switching Perovskite oxides Strongly correlated oxides R-RAM |
Fecha de publicación: | 31-jul-2017 | Editor: | Springer Nature | Citación: | Journal of Electroceramics: 10.1007/s10832-017-0101-2 (2017) | Resumen: | In recent years Resistive Random Access Memory (RRAM) is emerging as the most promising candidate to substitute the present Flash Technology in the non-volatile memory market. RRAM are based on the Resistive Switching (RS) effect, where a change in the resistance of the material can be reversibly induced upon the application of an electric field. In this sense, strongly correlated complex oxides present unique intrinsic properties and extreme sensitivity to external perturbations, which make them suitable for the nanoelectronics of the future. In particular, metallic complex oxides displaying metal-insulator transition (MIT) are very attractive materials for applications and are barely explored as RS active elements. In this work, we analyze the RS behavior of three different families of metallic perovskites: La0.8Sr0.2MnO3, YBa2Cu3O7-δ and NdNiO3. We demonstrate that these mixed electronic-ionic conductors undergo a metal-insulator transition upon the application of an electric field, being able to transform the bulk volume. This volume RS is different in nature from interfacial or filamentary type and opens new possibilities of robust device design. As an example, we present a proof-of-principle result from a 3-Terminal configuration with multilevel memory states. | Versión del editor: | http://dx.doi.org/10.1007/s10832-017-0101-2 | URI: | http://hdl.handle.net/10261/154888 | DOI: | 10.1007/s10832-017-0101-2 | ISSN: | 1385-3449 |
Aparece en las colecciones: | (ICMAB) Artículos |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
---|---|---|---|---|
Gonzalez_JElectrocer_2017_postprint.pdf | 1,66 MB | Adobe PDF | Visualizar/Abrir |
CORE Recommender
SCOPUSTM
Citations
25
checked on 12-abr-2024
WEB OF SCIENCETM
Citations
22
checked on 23-feb-2024
Page view(s)
314
checked on 22-abr-2024
Download(s)
291
checked on 22-abr-2024
Google ScholarTM
Check
Altmetric
Altmetric
NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.