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dc.contributor.authorBuldú, Javier M.en_US
dc.contributor.authorRogister, Fabienen_US
dc.contributor.authorTrull, J.en_US
dc.contributor.authorSerrat, Carlesen_US
dc.contributor.authorTorrent, M. C.en_US
dc.contributor.authorMirasso, Claudio R.en_US
dc.contributor.authorGarcía-Ojalvo, Jordi-
dc.date.accessioned2009-07-24T11:14:36Z-
dc.date.available2009-07-24T11:14:36Z-
dc.date.issued2002-
dc.identifier.citationProc. SPIE Vol. 4646: 411-419 (2002)en_US
dc.identifier.issn0277-786X (Print)-
dc.identifier.urihttp://hdl.handle.net/10261/15297-
dc.description9 pages, 7 figures.-- Presented at Conference: "Physics and Simulation of Optoelectronic Devices X" (San Jose, CA, USA, Jan 21, 2002).-
dc.description.abstractSemiconductor lasers with optical feedback are prone to exhibit unstable behavior. When working near threshold with moderate to low optical feedback, intensity dropouts are observed. These intensity drops, also called low-frequency fluctuations, occur both in single-mode and multimode semiconductor lasers. In this paper, the dynamics of the power distribution between the longitudinal modes of a multimode semiconductor laser is experimentally and numerically analyzed in the low-frequency fluctuation regime. It is observed that power dropouts of the total intensity, corresponding to drops in the dominant modes of the laser, are invariably accompanied by sudden activations of several longitudinal side modes. These activations are seen not to be simultaneous to the dropouts of the main modes, but to occur after them. The phenomenon is statistically analyzed in a systematic way, and the corresponding delay is estimated, leading to the conclusion that the side mode activation is a consequence of the dropouts of the dominant modes. A multimode extension of the Lang-Kobayashi equations is used to model the experimental setup. Numerical simulations also exhibit a time delay between the side-mode activation and the power dropout of the total intensity.-
dc.description.sponsorshipWe acknowledge financial support from Ministerio de Ciencia y Tecnologia (Spain), under projects PB98-0935, BFM2000-0624 and BFM2001-2159, from the EU IST network OCCULT, and from the Generalitat de Catalunya, under project 1999SGR-00147. FR is supported by the Inter-University Attraction Pole program (IAP IV/07) of the Belgian government.-
dc.format.extent2373 bytes-
dc.format.extent264601 bytes-
dc.format.mimetypetext/plain-
dc.format.mimetypeapplication/pdf-
dc.language.isoengen_US
dc.publisherThe International Society for Optics and Photonics-
dc.rightsopenAccessen_US
dc.subjectSemiconductor laser-
dc.subjectMultimode dynamics-
dc.subjectLow-frequency fluctuations-
dc.titleDynamics of power distribution in multimode semiconductoren_US
dc.typeartículoen_US
dc.identifier.doi10.1117/12.470543-
dc.description.peerreviewedPeer revieweden_US
dc.relation.publisherversionhttp://dx.doi.org/10.1117/12.470543-
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