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A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

AutorKiefer, David; Liyang, Yu; Fransson, Erik; Gómez Rodríguez, Andrés ; Primetzhofer, Daniel; Amassian, Aram; Campoy Quiles, Mariano ; Müller, Christian
Palabras claveConjugated polymers
Insulators
Molecular dopants
Organic thermoelectrics
Semiconductors
Ternary blend
Fecha de publicaciónene-2017
EditorWiley-VCH
CitaciónAdvanced Science 4(1): 1600203 (2017)
ResumenPoly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.
Versión del editorhttp://dx.doi.org/10.1002/advs.201600203
URIhttp://hdl.handle.net/10261/151000
DOI10.1002/advs.201600203
ISSN2198-3844
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