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Título: | A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics |
Autor: | Kiefer, David; Liyang, Yu; Fransson, Erik; Gómez Rodríguez, Andrés CSIC ORCID; Primetzhofer, Daniel; Amassian, Aram; Campoy Quiles, Mariano CSIC ORCID ; Müller, Christian | Palabras clave: | Conjugated polymers Insulators Molecular dopants Organic thermoelectrics Semiconductors Ternary blend |
Fecha de publicación: | ene-2017 | Editor: | Wiley-VCH | Citación: | Advanced Science 4(1): 1600203 (2017) | Resumen: | Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends. | Versión del editor: | http://dx.doi.org/10.1002/advs.201600203 | URI: | http://hdl.handle.net/10261/151000 | DOI: | 10.1002/advs.201600203 | ISSN: | 2198-3844 |
Aparece en las colecciones: | (ICMAB) Artículos |
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Kiefer_AdvSci_2017_editorial.pdf | 1,95 MB | Adobe PDF | Visualizar/Abrir |
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